Apparatus and methods for coupling conductive leads of semiconductor assemblies

ABSTRACT

Apparatus and methods for coupling conductive leads of semiconductor assemblies are disclosed. In one embodiment, a semiconductor assembly includes a semiconductor device having at least two bond pads with a conductive member extending between the bond pads, external to the device. In one embodiment, the conductive member can be connected directly to the bond pads and can extend between the bond pads at or above the surface of the semiconductor device. In another embodiment, the conductive member can be connected on top of another conductive member previously attached to one of the bond pads. The conductive members can be attached to each other or to the bond pads with either ball bonds or wedge bonds to provide electrical signals to selected bond pads of the semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of pending U.S. patent application Ser. No. 09/143,526, filed Aug. 28, 1998.

TECHNICAL FIELD

The present invention relates to methods and apparatuses for electrically coupling bond pads of a microelectronic device.

BACKGROUND OF THE INVENTION

Computers and other electronic devices typically include a number of interconnected semiconductor devices. The semiconductor devices include a semiconductor chip or die containing internal circuitry. The dies are generally mounted in a package and connected to other semiconductor devices through external pins or contacts. However, the dies may also be connected directly to other circuitry, including another semiconductor die.

FIG. 1A is a side elevation view of a portion of a semiconductor die 20 having two bond pads 21 (shown as 21 a and 21 b) on a surface of the die. The bond pads 21 may be coupled to each other with circuitry 53 that is internal to the semiconductor die 20, as shown schematically in FIG. 1A. One bond pad 21 a is electrically coupled with a wire 50 to a lead finger 43 of a conductive lead frame 40. In one conventional arrangement, one end of the wire 50 is bonded to the bond pad 21 a with a “ball bond” 60 and the other end of the wire 50 is bonded to the lead finger 43 with a “wedge bond” 70. The semiconductor die 20 and the lead frame 40 may then be encapsulated in a plastic material (not shown) and ends 42 of adjacent lead fingers 43 (one of which is shown in FIG. 1A) may be bent downward to form connection pins. The pins may be inserted into corresponding sockets of another device (not shown) to couple the semiconductor die with the other device.

FIG. 1B is an enlarged side elevation view of a portion of the semiconductor die 20 shown in FIG. 1A, as the wire 50 is being attached to the bond pad 21 a. The wire 50 can be attached with a wire bonding tool 30 (shown in FIG. 1B as a ball/wedge bonder 30 a) by feeding the wire 50 downwardly through an aperture 31 of the ball/wedge bonder 30 a and forming a wire ball 51 at the end of the wire 50. The ball/wedge bonder 30 a then presses the wire ball 51 against the bond pad 21 a while the remainder of the wire 50 extends approximately normal to the bond pad 21 a. The bonder 30 a then applies heat and/or pressure to the wire 50 at the wire ball 51 to bond the wire to the bond pad 21 a, forming the ball bond 60 shown in FIG. 1A. For example, the bonder 30 a can use a thermosonic or thermocompression process to apply both heat and pressure to the wire 50. The bonder 30 a then moves along the wire 50 to the lead finger 43 and presses the wire 50 against the lead finger 43. The bonder again applies heat and/or pressure to the wire 50 to both bond the wire 50 to the lead frame 40 (forming the wedge bond 70 shown in FIG. 1A), and separate the bonded portion of the wire 50 from a remaining portion of the wire.

FIG. 2A is a side elevation view of the semiconductor die 20 having the wire 50 connected between the bond pad 21 a and the lead finger 43 in accordance with another conventional arrangement in which a first wedge bond 70 a is formed at the bond pad 21 a and a second wedge bond 70 b is formed at the lead finger 43. FIG. 2B is an enlarged side elevation view of a portion of the semiconductor die 20 shown in FIG. 2A as the wire 50 is being attached to the bond pad 21 a.

Referring to FIG. 2B, the wire 50 can be attached to the bond pad 21 a with a wedge/wedge bonder 30 b by feeding the wire 50 through an aperture 31 a of the wedge/wedge bonder 30 b and pressing the wire 50 against the bond pad 21 a. The wedge/wedge bonder 30 b then applies heat and/or pressure to the wire 50 to bond the wire to the bond pad 21 a, forming the first wedge bond 70 a shown in FIG. 2A. The bonder 30 b then moves along the wire 50 to the lead finger 43 and presses the wire against the lead finger 43. The bonder 30 b again applies heat and/or pressure to the wire to bond the wire 50 to the lead finger 43, forming the second wedge bond 70 b shown in FIG. 2A. In one conventional arrangement, the bonder 30 b can apply sufficient heat and/or pressure to both bond the wire 50 to the lead frame 40 and separate the bonded wire from the remaining supply of wire. In another conventional arrangement, the bonded wire can be separated from the remaining wire by clipping the wire next to the second wedge bond 70 b.

As discussed above, two or more bond pads 21 may be connected within the die 20 by internal circuitry 53. The internal circuitry 53 may include very small conductive lines. One drawback with this arrangement is that the conductive lines may have a high resistance, increasing the current necessary to transmit signals between the bond pads, and increasing the heat generated by each semiconductor die. In addition, internal circuitry 53 is inaccessible once the die has been manufactured. Accordingly, another drawback with conventional arrangements is that they may lack the flexibility for interconnecting bond pads that are not connected by the internal circuitry at the time of manufacture.

Yet a further drawback with the conventional methods and devices discussed above is that it may be difficult to route wires between the lead frame 40 and bond pads that are not proximate to the lead frame 40. For example, if one or more of the wires 50 is particularly long, so as to reach a particular bond pad, the wire may be more likely to break or contact other adjacent wires, creating a short circuit that can affect the operation of the semiconductor device.

SUMMARY OF THE INVENTION

The present invention is directed toward methods and apparatuses for electrically coupling bond pads of a microelectronic device. In one aspect of the invention, the apparatus can include first and second spaced apart bond pads on a surface of a microelectronic device. The microelectronic device can further include a conductive member connected to and extending between the first and second bond pads. The conductive member can be positioned on or above the surface of the microelectronic device. In one aspect of the invention, the conductive member can include a wire, and, in another aspect of the invention, the conductive member can include a flowable conductive material, such as a conductive epoxy. In still another aspect of the invention, the microelectronic device can include an insulating material between the conductive member and the surface of the microelectronic device.

In yet another aspect of the invention, the apparatus can include a microelectronic device having at least one bond pad for receiving wire connections. The microelectronic device can further include two wires connected to the same bond pad, for example, a first wire connected at one end to the bond pad with a first bond and a second wire connected at one end to the first bond with a second bond. Either or both of the first and second bonds can be a wedge bond or a ball bond, and the opposite ends of the first and second wires can be connected to other bond pads of the microelectronic device, or to external structures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a side elevation view of a portion of a semiconductor die and lead frame in accordance with the prior art.

FIG. 1B is an enlarged partial cross-sectional side elevation view of a portion of the semiconductor die and the lead frame shown in FIG. 1A adjacent a wire bonding tool in accordance with the prior art.

FIG. 2A is a side elevation view of a semiconductor die and lead frame in accordance with another embodiment of the prior art.

FIG. 2B is an enlarged partial cross-sectional side elevation view of a portion of the semiconductor die and the lead frame shown in FIG. 2A adjacent a wire bonding tool in accordance with another embodiment of the prior art.

FIG. 3A is a side elevation view of a portion of a microelectronic device assembly having a bond pad with a ball bond and a wedge bond on top of the ball bond in accordance with an embodiment of the invention.

FIG. 3B is a side elevation view of a portion of a microelectronic device assembly having a bond pad with two wedge bonds attached to the bond pad in accordance with another embodiment of the invention.

FIG. 3C is a side elevation view of a portion of a microelectronic device assembly having a bond pad with a wedge bond and a ball bond on top of the wedge bond in accordance with still another embodiment of the invention.

FIG. 3D is a side elevation view of a portion of a microelectronic device assembly having a bond pad with two ball bonds attached to the bond pad in accordance with yet another embodiment of the invention.

FIG. 3E is a side elevation view of a microelectronic device assembly in accordance with another embodiment of the invention.

FIG. 4 is a cross-sectional side elevation view of a portion of a microelectronic device assembly having two bond pads connected to each other with a flowable conductive material in accordance with still another embodiment of the invention.

FIG. 5 is a top plan view of a portion of a microelectronic device assembly having two crossing conductive members extending between bond pads of the assembly.

FIG. 6 is a top plan view of a microelectronic device assembly having conductive members extending between bond pads of the microelectronic device assembly in accordance with still another embodiment of the invention.

FIG. 7 is a top plan view of a microelectronic device assembly having a conductive member extending beneath a support portion of a lead frame in accordance with another embodiment of the invention.

FIG. 8 is a top plan view of a wafer having a plurality of interconnected microelectronic dies in accordance with yet another embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed toward methods and apparatuses for conductively linking bond pads of microelectronic devices. The apparatus can include a microelectronic device having wires bonded between bond pads of a single device or between the bond pads of two devices. The wires can be bonded to the bond pads using various combinations of ball bonds, wedge bonds and other types of bonds. Many specific details of certain embodiments of the invention are set forth in the following description and in FIGS. 3A-8 to provide a further understanding of such embodiments. One skilled in the art, however, will understand that the present invention may have additional embodiments and that they may be practiced without several of the details described in the following description.

FIG. 3A is a side elevation view of a portion of a microelectronic device assembly 110 in accordance with an embodiment of the invention. The assembly 110 can include a microelectronic device 120 having bond pads 121 (shown as a first bond pad 121 a and a second bond pad 121 b) on an upper surface 123 of the microelectronic device 120. The bond pads 121 can be connected to each other or to external structures with conductive members 150 (shown as a first conductive member 150 a and a second conductive member 150 b) that are positioned external to the upper surface 123 of the microelectronic device 120. In one embodiment, the conductive members 150 can include wires made from aluminum, gold or other conductive materials, and in other embodiments, the conductive members 150 can include other structures and materials.

In one embodiment, the first conductive member 150 a can be connected between the first bond pad 121 a and an adjacent conductive structure, such as a lead frame 140. In one aspect of this embodiment, the first conductive member 150 a can be connected to the first bond pad 121 a with a ball bond 160 a and can be connected to the lead frame 140 with a wedge bond 170 a . The ball bond 160 a can be made by forming an enlarged region at one end of the first conductive member 150 a and then engaging the enlarged region with the bond pad 160 a and applying heat and/or pressure to the first conductive member 150 a and/or the bond pad 121 a. The wedge bond 170 a can be formed by engaging a side surface near the other end of the first conductive member 150 a with the lead frame 140 and applying heat and/or pressure to the first conductive member 150 a and/or the lead frame 140. Suitable devices for forming both the ball bond 160 a and the wedge bond 170 a are available from Small Precision Tools of Petaluma, Calif.

The bond pads 121 a and 121 b can be connected to each other with the second conductive member 150 b. Accordingly, the second conductive member 150 b can include a second ball bond 160 b at the second bond pad 121 b and a second wedge bond 170 b at the first bond pad 121 a. In one embodiment, a lower surface 171 of the second wedge bond 170 b can be adjacent an upper surface 162 of the first ball bond 160 a. In another embodiment, the second wedge bond 170 b can be adjacent the first ball bond 160 a in a side-by-side arrangement, for example, where the first bond pad 121 a is large enough to permit such an arrangement.

An advantage of the assembly 110 shown in FIG. 3A is that the second conductive member 150 b can provide a conductive link between the bond pads 121 a and 121 b without changing the internal circuitry of the microelectronic device 120. This can be advantageous where no internal connections couple the bond pads 121 a and 121 b at the time the microelectronic device 120 is manufactured, and where the conductive link provided by the second conductive member 150 b can be used to modify or repair the microelectronic device 120 after it has been manufactured. Alternatively, where a conductive path does exist between the two bond pads 121 a and 121 b (for example, a metal layer or other internal circuitry 153 shown schematically in FIG. 3A), the second conductive member 150 b can supplement the internal circuitry 153. In one embodiment, the second conductive member 150 b can be relatively large when compared to the internal circuitry 153 and can accordingly reduce electrical resistance between the two bond pads 121 a and 121 b, increasing current flow and signal speed between the bond pads and decreasing the amount of heat generated by the microelectronic device 120.

Another advantage is that in one embodiment, at least some of the internal connections of the microelectronic device 120 can be eliminated and replaced with the external second conductive member 150 b. This arrangement can make volume available within the microelectronic device 120 for other circuit elements, potentially increasing the capability of the microelectronic device 120.

Still another advantage is that a variety of microelectronic devices 120 can be made compatible with a single lead frame configuration, or conversely, a variety of lead frames 140 can be made compatible with a single microelectronic device configuration. For example, where the portion of the lead frame 140 shown in FIG. 3A is configured to be proximate to the first bond pad 121 a, and a later version of the microelectronic device 120 requires that the signal produced at that portion of the lead frame 140 be transmitted to the second bond pad 121 b, the second conductive member 150 b can be used to route the signal to the second bond pad 121 b.

Yet another advantage is that the second conductive member 150 b can be selectively sized to affect the capacitance of circuits that include the first and second bond pads 121 a and 121 b. For example, the distance between the second conductive member 150 b and the microelectronic device 120 can be varied and/or a dielectric material 152 can be positioned between the second conductive member 150 b and the microelectronic device 120 to adjust the capacitance of selected circuits in the microelectronic device 120.

FIG. 3B is a side elevation view of a portion of a microelectronic device assembly 210 having two wedge bonds 270 a a and 270 b attached to the first bond pad 121 a in accordance with another embodiment of the invention. As shown in FIG. 3B, one end of a first conductive member 250 a can be attached to the first bond pad 121 a with the first wedge bond 270 aa, and the other end of the first conductive member 250 a can be attached to the lead frame 140 with a second wedge bond 270 a. A second conductive member 250 b can be connected between the first bond pad 121 a and the second bond pad 121 b with a third wedge bond 270 b and a fourth wedge bond 270 bb. In one embodiment, a lower surface 271 of the third wedge bond 270 b engages an upper surface 272 of the first wedge bond 270 aa. In another embodiment, the first wedge bond 270 aa can be placed on top of the third wedge bond 270 b, or the wedge bonds 270 aa and 270 b can be placed side by side, as discussed above with reference to FIG. 3A.

An advantage of the arrangement shown in FIG. 3B is that it may be easier to form wedge bonds than it is to form ball bonds because the wedge bonds do not require forming an enlarged portion at the end of the wire. Conversely, an advantage of the arrangement shown in FIG. 3A is that once the ball bond is formed at one end of the conductive member 150, the other end of the conductive member can be positioned in any direction relative to the ball bond, whereas in the arrangement shown in FIG. 3B, the tool that forms wedge bonds at both ends of the conductive members 250 can generally move in only one direction.

Furthermore, the ball bonds may be less likely than the wedge bonds to damage the structure to which they are attached. Accordingly, it may be advantageous to apply a ball bond to the relatively small bond pads 121 of the microelectronic device 120, and apply wedge bonds to the larger and more robust lead frames 140 (as shown in FIG. 3A). However, this difference between the arrangements shown in FIG. 3A and FIG. 3B may be less important where the tool forming the wedge bond clips the conductive member adjacent the wedge bond rather than deforming the conductive member to separate it from the wedge bond. In either case, the bond that is formed first on the bond pad 121, whether it is a wedge bond or a ball bond, can provide a support structure that protects the bond pad 121 from damage which might otherwise be incurred by the bonding tool.

In other embodiments, other combinations of ball bonds and wedge bonds may be used to connect a bond pad 121 on one portion of a microelectronic device 120 with a bond pad 121 on another portion of the microelectronic device 120. For example, FIG. 3C is a side elevation view of a portion of a microelectronic device assembly 310 with a first conductive member 350 a coupled to the lead frame 140 with a first wedge bond 370 a and coupled to the first bond pad 121 a with a second wedge bond 370 aa. A second conductive member 350 b can be coupled to the first bond pad 121 a with a ball bond 360 b on top of the second wedge bond 370 aa, and can be coupled to the second bond pad 121 b with a third wedge bond 370 b.

FIG. 3D is a side elevation view of a portion of yet another microelectronic device assembly 410 having a first conductive member 450 a connected at one end to the first bond pad 121 a with a first ball bond 460 a and connected at the opposite end to the lead frame 140 with a first wedge bond 470 a . A second conductive member 450 b can be coupled to the first bond pad 121 a with a second ball bond 460 b that is positioned on top of the first ball bond 460 a . The second conductive member 450 b can then be connected to the second bond pad 121 b with a second wedge bond 470 b.

As shown in FIG. 3D, the assembly 410 can also include an insulator 452 positioned between the second conductive member 450 b and the upper surface 123 of the microelectronic device 120. In one embodiment, the insulator 452 can include a polyimide and in other embodiments the insulator 452 can include other non-conductive materials. The insulator 452 can reduce the likelihood of contact between the second conductive member 450 b and conductive structures (not shown) on the upper surface 123 of the microelectronic device 120.

In still a further embodiment shown in FIG. 3E, one or both of the bond pads 121 can be coupled directly to an external device without the first conductive member 450 a. For example, in a “flip chip” embodiment, the microelectronic device 120 can be inverted and placed face down on a substrate 145 such that the upper surface 123 of the microelectronic device 120 faces the substrate 145 with the second ball bond 460 b and the second wedge bond 470 b connected directly to contacts 146 on the substrate 145. In other embodiments, this type of arrangement can include any of the bonding configurations shown in FIGS. 3A-3C.

FIG. 4 is a cross-sectional side elevation view of a portion of a microelectronic device assembly 510 having two bond pads 121 a and 121 b directly connected with a flowable conductive material 554 in accordance with still another embodiment of the invention. In one embodiment, the conductive material 554 can include an epoxy having a suspension of conductive particles, such as silver, that create a conductive path between the bond pads 121. The epoxy can be applied in a liquid or paste form that then hardens to form a permanent connection between the bond pads. In other embodiments, other materials can be used to connect the bond pads 121, so long as they provide a conductive path between the bond pads.

The microelectronic device assembly 510 shown in FIG. 4 can also include an insulator 552 between the conductive material 554 and the upper surface 123 of the microelectronic device 120. As discussed above with reference to FIG. 3D, the insulator 552 can prevent electrical contact between the conductive material 554 and structures on the upper surface 123 of the microelectronic device 120.

An advantage of the assembly 510 shown in FIG. 4 is that it may be easier to apply the flowable conductive material 554 to the microelectronic device 120 than it is to attach the conductive members shown in FIGS. 3A-3D. For example, an applicator used to dispense the conductive material 554 can travel in any direction once initial contact has been made with one of the bond pads 121. Furthermore, the conductive material 554 may not require heat or pressure to form a bond with the bonds pads 121, reducing the likelihood of damaging either the bond pads 121 or the microelectronic device 120 in the region of the bond pads. Conversely, an advantage of the conductive members shown in FIGS. 3A-3D is that they may be more conductive than the conductive material 554, thereby providing faster signal speeds and less heat than the conductive material 554.

FIG. 5 is a top plan view of a portion of a microelectronic device assembly 610 having a microelectronic device 620 with two crossing conductive members 650 (shown as a first conductive member 650 a and a second conductive member 650 b) connected between four bond pads 621 (shown as 621 a-621 d) of the microelectronic device 620. In one embodiment, the first conductive member 650 a can be coupled between first and second bond pads 621 a and 621 b, and the second conductive member 650 b can be coupled between third and fourth bond pads 621 c and 621 d such that two conductive members 650 cross over each other. In one aspect of this embodiment, one or both of the conductive members 650 can include an insulating layer 655 to prevent inadvertent electrical contact between the conductive members 650. Alternatively, insulators such as those shown in FIGS. 3D and 4 can be positioned between the first and second conductive members 650 a and 650 b, and/or between the conductive members and an upper surface 623 of the microelectronic device 620.

In one embodiment, wire bumps 656 can be disposed on the bond pads 621 beneath the conductive members 650 to reduce the likelihood of damaging the bond pads 621 when the conductive members 650 are coupled to the bond pads 621. Details of the wire bumps 656 and the application of the wire bumps to the bond pads 620 are disclosed in copending U.S. patent application Ser. No. 08/840,604, incorporated herein in its entirety by reference. Alternatively, where the bond pads 621 are connected to external devices, such as a lead frame, the conductive members 650 can be coupled to the bond pads 621 by attaching the conductive members on top of the bonds of other conductive members, in a manner generally similar to that shown in FIGS. 3A-3D. In still another embodiment, the conductive members 650 can be bonded directly to the corresponding bond pads 121 without any intermediate structures.

FIG. 6 is a top plan view of a microelectronic device assembly 710 that includes a microelectronic substrate 720 having bond pads 721 (shown as a first bond pad 721 a and a second bond pad 721 b). The assembly 710 further includes a lead frame 740 having lead fingers 743 (shown as a first lead finger 743 a and a second lead finger 743 b) positioned adjacent the microelectronic device 720. Each lead finger 743 may be coupled with a conductive member to a corresponding bond pad 721. For example, the first lead finger 743 a can be coupled to the first bond pad 721 a with a first conductive member 750 a, and the second lead finger 743 b can be coupled to the second bond pad 721 b with a second conductive member 750 b.

Alternatively, the second bond pad 721 b can be coupled to the first lead finger 743 a via a third conductive member 750 aa, shown in dashed lines in FIG. 6. For example, the first lead finger 743 a can be connected to the first bond pad 721 a, as discussed above, and the first bond pad 721 a can be connected to an auxiliary bond pad 721 c with a conductive element 753, such as a flat metal layer 753. The conductive element 753 can be positioned either above, on, or below an upper surface 723 of the microelectronic device 720, and the auxiliary bond pad 721 c can be connected to one end of the third conductive member 750 aa. Accordingly, the conductive element 753, the auxiliary bond pad 721 c, and the third conductive member 750 aa can provide a connection between the second bond pad 721 b and the first lead finger 743 a.

An advantage of the assembly 710 shown in FIG. 6 is that the auxiliary bond pad 721 c allows the second bond pad 721 b to be coupled to the first lead finger 743 a without routing the third conductive member 750 aa over other lead fingers or over other bond pads. Accordingly, the assembly 710 can reduce the likelihood that the third conductive member 750 aa will contact or otherwise interfere with other bond pads or lead fingers of the assembly 710.

Another advantage of the assembly 710 shown in FIG. 6 is that the auxiliary bond pad 721 c can be positioned on the microelectronic device 720 such that the length of the third conductive member 750 aa is less than it would be if it were to extend all the way to the first lead finger 743 a. Accordingly, the third conductive member 750 aa may be less likely to make electrical contact with other structures of the microelectronic device 720, and may be less likely to become entangled or otherwise engaged with such structures, which might damage the third conductive member 750 aa. Furthermore, by placing the auxiliary bond pad 721 c near the second bond pad 721 b, the third conductive member 750 aa may be more nearly “vertical” (as seen FIG. 6) near the second bond pad 721 b, which may reduce stresses at the bond between the third conductive member 750 aa and the second bond pad 721 b.

FIG. 7 is a top plan view of another embodiment of the assembly 710 in which the lead frame 740 includes a bar or a bus 741 that extends over the upper surface 723 of the microelectronic device 720. Accordingly, the microelectronic device 720 can include a metal layer 753 a that extends between the first bond pad 721 a and the auxiliary bond pad 721 c beneath the upper surface 723 of the microelectronic device 720 so as not to contact the bus 741. For example, in one embodiment, the metal layer 753 a can be disposed beneath the upper surface 723 of the microelectronic device 720 during fabrication of the microelectronic device.

The microelectronic device 720 can further include third and fourth bond pads 721 d and 721 e that can be selectively coupled to the auxiliary bond pad 721 c using any of the techniques described above with reference to FIGS. 3A-5. For example, in one embodiment, the third bond pad 721 d can be connected to the auxiliary bond pad 721 c to produce a desired operating characteristic, such as an operating voltage, in the microelectronic device 720. Alternatively, the fourth bond pad 721 e can be connected to the auxiliary bond pad 721 c to produce a different operating characteristic in the microelectronic device 720. In still another arrangement, both the third and fourth bond pads 721 d and 721 e can be connected simultaneously to the auxiliary bond pad 721 c. Accordingly, an advantage of the assembly 710 shown in FIG. 7 is that the combination of the metal layer 753 a and the auxiliary bond pad 721 c can be used to route signals from the first lead finger 743 a to one or more bond pads that are not adjacent the lead finger 743 a. In alternate embodiments, the metal layer 753 a can be replaced with insulated conductive members, such as those shown in FIG. 5, or other structures that similarly extend between the first bond pad 721 a and the auxiliary bond pad 721 c without making electrical contact with the bar 741.

FIG. 8 is a top plan view of a microelectronic wafer 822 having a plurality of microelectronic dies 820, including a first microelectronic die 820 a and a second microelectronic die 820 b. The first die 820 a can include a first bond pad 821 a and the second die 820 b can include a second bond pad 821 b. A conductive member 850 can be connected between the bond pads 820 a and 820 b to interconnect microelectronic dies positioned on the wafer 822.

An advantage of the embodiment shown in FIG. 8 is that two or more microelectronic dies 820 can be connected to each other to form a larger device before the dies 820 are separated from the wafer 822. For example, several memory dies can be connected to form a device having a larger memory capacity. Accordingly, the dies 820 form building blocks and the same die design can be used for both relatively small and relatively large memory devices. By connecting the dies of the relatively large device before the dies are separated, the individual dies need not be separated at all, reducing the likelihood that the dies will be damaged during separation. Furthermore, this arrangement virtually eliminates the possibility that the dies will be misaligned relative to each other when they are connected together.

From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims. 

What is claimed is:
 1. A semiconductor assembly, comprising: a semiconductor device having a surface; a first bond pad on the surface of the semiconductor device; a second bond pad on the surface of the semiconductor device, the second bond pad being spaced apart from the first bond pad; and an approximately arch-shaped conductive member coupled between the first and second bond pads, the conductive member being external to the semiconductor device.
 2. The assembly of claim 1 wherein the conductive member is spaced apart from the surface of the semiconductor device.
 3. The assembly of claim 2, further comprising an electrically insulating material between the conductive member and the surface of the semiconductor device.
 4. The assembly of claim 2, further comprising a dielectric material between the conductive member and the surface of the semiconductor device.
 5. The assembly of claim 1 wherein the conductive member is on the surface of the semiconductor device.
 6. The assembly of claim 1 wherein the conductive member is a first conductive member, further comprising a conductive structure at least proximate to the semiconductor device, the conductive structure being connected to at least one of the first and second bond pads with a second conductive member.
 7. The assembly of claim 6 wherein the conductive structure includes a lead frame.
 8. The assembly of claim 1 wherein the semiconductor device includes a third bond pad, further comprising: a conductive structure extending over the surface of the semiconductor device; and a conductive element disposed beneath the surface of the semiconductor device and the conductive structure and connected between the first and third bond pads.
 9. The assembly of claim 1 wherein the conductive member is a first conductive member, further comprising a second conductive member coupled to at least one of the first and second bond pads.
 10. The assembly of claim 9 wherein the second conductive member is connected to a portion of the first conductive member adjacent the one of the first and second bond pads.
 11. The assembly of claim 1 wherein the conductive member is a first conductive member further comprising: third and fourth bond pads on the surface of the semiconductor device; and a second conductive member connected between the third and fourth bond pads.
 12. The assembly of claim 1 wherein the semiconductor device includes a semiconductor wafer having a plurality of semiconductor dies and the first and second bond pads are positioned on one of the semiconductor dies.
 13. The assembly of claim 1 wherein the semiconductor device includes a semiconductor wafer having a plurality of semiconductor dies, the first bond pad being positioned on a first one of the semiconductor dies and the second bond pad being positioned on a second one of the semiconductor dies.
 14. The assembly of claim 1, further comprising a substrate having a first terminal connected to the conductive member proximate to the first bond pad, and a second terminal spaced apart from the first terminal and connected to the conductive member proximate to the second bond pad.
 15. A semiconductor assembly, comprising: a semiconductor device having a bond pad; a first elongated conductive lead external to the semiconductor device and having a first end portion connected to the bond pad, and a second end portion extending away from the bond pad, the first end portion including a first bonding surface connected to the bond pad and a second bonding surface generally opposite the first bonding surface; and a second elongated conductive lead external to the semiconductor device and bonded to the second bonding surface of the first elongated conductive lead.
 16. The assembly of claim 15 wherein the semiconductor device includes a semiconductor wafer having a plurality of semiconductor dies, the bond pad being positioned on one of the semiconductor dies.
 17. The assembly of claim 15 wherein the semiconductor device includes a semiconductor die.
 18. The assembly of claim 15 wherein the bond pad is a first bond pad, the semiconductor device further including a second bond pad spaced apart from the first bond pad, and wherein the second elongated conductive lead includes a first end portion attached to the second bonding surface and a second end portion attached to the second bond pad.
 19. The assembly of claim 15, further comprising an conductive structure adjacent the semiconductor device, the first elongated conductive lead having first end portion connected to the bond pad and a second end portion connected to the conductive structure.
 20. The assembly of claim 15 wherein the conductive structure comprises a lead frame.
 21. The assembly of claim 15 wherein the first end portion is connected to the bond pad with a wedge bond, the second bonding surface being formed on the wedge bond, and wherein the second elongated conductive lead is connected to the second bonding surface with a ball bond.
 22. The assembly of claim 15 wherein the first end portion is connected to the bond pad with a ball bond, the second bonding surface being formed on the ball bond, and wherein the second elongated conductive lead is connected to the second bonding surface with a wedge bond.
 23. A semiconductor assembly, comprising: a semiconductor device having first and second bond pads formed at least proximate to an outer surface thereof, the second bond pad being spaced apart from the first bond pad; a first wire having a first attachment surface connected to the first bond pad and a second attachment surface generally opposite the first attachment surface, the first wire extending away from the first bond pad; and a second wire having a first portion connected to the second attachment surface and a second portion connected to the second bond pad.
 24. The assembly of claim 23 wherein the second wire is positioned adjacent the outer surface.
 25. The assembly of claim 23, further comprising an insulating material at least partially surrounding the second wire.
 26. The assembly of claim 23 wherein the second wire is spaced apart from the outer surface, further comprising an insulating material positioned between the second wire and the outer surface.
 27. The assembly of claim 23 wherein the first wire is connected to the first bond pad with a wedge bond, the second attachment surface being formed on the wedge bond, and the second wire is connected to the second attachment surface with a ball bond.
 28. The assembly of claim 23 wherein the first wire is connected to the first bond pad with a ball bond, the second attachment surface being formed on the ball bond, and the second wire is connected to the second attachment surface with a wedge bond.
 29. A semiconductor assembly, comprising: a semiconductor device having first and second bond pads formed at least proximate to an outer surface thereof, the second bond pad being spaced apart from the first bond pad; and a flowable conductive material bonded to and extending between the first and second bond pads to electrically couple the first and second bond pads.
 30. The assembly of claim 29 wherein the flowable conductive material includes a conductive epoxy that hardens after being connected to the first and second bond pads.
 31. The assembly of claim 29 wherein the flowable conductive material is formed on the outer surface.
 32. The assembly of claim 29 wherein the flowable conductive material is spaced apart from the outer surface.
 33. The assembly of claim 29 wherein the flowable conductive material is spaced apart from the outer surface, further comprising an electrically insulating material between the flowable conductive material and the first surface.
 34. A semiconductor assembly, comprising: a semiconductor device having at least one conductive terminal; a first conductive lead connected to the conductive terminal with a wedge bond; and a second conductive lead bonded to the wedge bond with a ball bond.
 35. The assembly of claim 34 wherein the wedge bond is formed by forcing a side surface of the first conductive lead against the conductive terminal to deform the side surface of the first conductive lead.
 36. The assembly of claim 34 wherein the wedge bond is formed by clipping the first conductive lead adjacent the conductive terminal.
 37. The assembly of claim 34 wherein the wedge bond is formed by squeezing the first conductive lead between a tool and the conductive terminal to disconnect a portion of the first conductive lead adjacent the conductive terminal.
 38. The assembly of claim 34 wherein the ball bond includes an enlarged portion at an end of the second conductive lead engaged with the wedge bond, the enlarged portion having had at least one of heat and pressure applied thereto while at least part of the second conductive lead extends in a direction generally normal to the conductive terminal to connect the second conductive lead to the conductive terminal.
 39. The assembly of claim 34 wherein the conductive terminal is a first conductive terminal, the semiconductor device having a second conductive terminal spaced apart from the first conductive terminal, the second conductive lead being connected between the first conductive terminal and the second conductive terminal.
 40. The assembly of claim 34, further comprising a conductive structure proximate the semiconductor device, the first conductive lead being connected between the first conductive terminal and the conductive structure.
 41. A semiconductor assembly, comprising: a semiconductor device having at least one conductive terminal; a first conductive lead connected to the conductive terminal with a ball bond; and a second conductive terminal bonded to the ball bond with a wedge bond.
 42. The assembly of claim 41 wherein the ball bond includes an enlarged portion at an end of the first conductive lead, the enlarged portion having had at least one of heat and pressure applied thereto.
 43. The assembly of claim 41 wherein the wedge bond is formed by forcing a side surface of the second conductive lead against the ball bond to deform the side surface of the second conductive lead.
 44. The assembly of claim 41 wherein the wedge bond is formed by clipping the second conductive lead adjacent the ball bond.
 45. The assembly of claim 41 wherein the wedge bond is formed by squeezing the second conductive lead between a tool and the ball bond to disconnect a portion of the second conductive lead adjacent the ball bond.
 46. The assembly of claim 41 wherein the conductive terminal is a first conductive terminal, the semiconductor device having a second conductive terminal spaced apart from the first conductive terminal, the second conductive lead being connected between the ball bond and the second conductive terminal.
 47. The assembly of claim 46, further comprising a conductive structure proximate the semiconductor device the first conductive lead being connected between the first conductive terminal and the conductive structure.
 48. A semiconductor assembly, comprising: a semiconductor device having at least one bond pad; a first conductive lead connected to the bond pad with a first wedge bond; and a second conductive lead bonded to the first wedge bond with a second wedge bond.
 49. The assembly of claim 48 wherein at least one of the first and second wedge bonds is formed by forcing a side surface of the respective one of the first or second conductive leads against the respective one of the bond pad or the first wedge bond to deform the side surface.
 50. The assembly of claim 48 wherein at least one of the first and second wedge bonds is formed by clipping the corresponding one of the first and second conductive leads adjacent the respective one of the bond pad or the first wedge bond.
 51. The assembly of claim 48 wherein at least one of the first and second wedge bonds is formed by squeezing the corresponding one of the first and second conductive leads between a tool and the respective one of the bond pad or the first wedge bond to disconnect a portion of the corresponding one of the first and second conductive leads adjacent the respective one of the bond pad or the first wedge bond.
 52. The assembly of claim 48 wherein the bond pad is a first bond pad, the semiconductor device having a second bond pad spaced apart from the first bond pad, the first conductive lead extending away from the first bond pad, the second conductive lead being connected between the first bond pad and the second bond pad.
 53. The assembly of claim 52, further comprising a conductive structure proximate the semiconductor device, the first conductive lead being connected between the first bond pad and the conductive structure. 